Minebea to Soar its Power IC Grit in Hitachi Deal

MINEBEA MITSUMI Inc. has announced completing the share transfer agreement with Hitachi, Ltd. on its acquisition of Hitachi Power Semiconductor Device, Ltd. 

Accordingly, Hitachi Power Device will become a subsidiary of MINEBEA MITSUMI. Thus, resulting also to a change of name to Minebea Power Semiconductor Device Inc.

With the completion of the acquisition, Minebea will acquire back-end process technologies and production capacity for packaging and module fabrication. Thus, this will allow the company to deploy a vertically integrated business for power semiconductors. Specifically, covering development through to production harmonizing the company’s existing traditional chip manufacturing capabilities. 

Aims for Higher Sales

Accordingly, the basic strategy is to identify the products as its core business called the “Eight Spears”. Here, the Company aims to demonstrate its strengths in super-precision processing technologies. Moreover, in mass production technologies and to provide the customers with new values by INTEGRATION*1. Its analog semiconductor business, which also covers power semiconductors, is one of the “Eight Spears.”

In addition, the company aims to further expand its business in the power semiconductor space. Particularly, IGBTs*3, and eventually expand its business size and increase the business value. Thus, the company aims to achieve growth in sales from the current 80 billion yen level to 300 billion yen by 2030 with help of M&A.

Moreover, they company will continue to focus in its mainstay lithium-ion battery protection ICs, power management ICs, timer ICs, MEMS*2 sensors, magnetic sensors, and automotive memories.

Most importantly, Minebea Power Semiconductor Device aims to provide power semiconductor products. These are key devices in the electrification and motorization of industries and social infrastructure. It has established a solid position in a high-growth end market with its highly competitive product portfolio by producing numerous cost-competitive products that achieve both miniaturization and high performance.

The new Minebea Power Semiconductor Device now has superior technologies and products.  Particularly, it has strong technological development capabilities in power semiconductors such as high-voltage SiC, high-voltage IGBT, SG (side gate)-IGBT for EV, high-voltage IC, and diodes for alternators.

Unleashing the Synergies

Minebea Mitsumi hopes the integration of the two companies will result in the unleashing of synergies between the power device business and internal operations.

Thus, achieving a performance close to SiC with Si power devices and developing the SiC power device business by leveraging the high-voltage SiC technology.  

Moreover, Minebea Power Semiconductor Device’s SiC will strive to become a leader in the power semiconductor market with a competitive edge.

Regarding new product development under the new company, some of the plans include new motor solutions. Specifically, utilizing the know-how of high-voltage motor control for to its DC motor products and to enhance medical device products by integrating special process technology and design technology and combining them with ABLIC products to create new added value.

Furthermore, Minebea Mitsumi has been contracted by Minebea Power Semiconductor Device as their front-end fab, and SG-IGBT is already in prototyping at its Shiga plant. As such, the Company believes that it will be able to incorporate added value from the first day of vertical integration.

02 May 2024