The U.S. government granted federal funding of US$35 million to GlobalFoundries to accelerate the manufacturing of differentiated gallium nitride (GaN) on silicon semiconductors at its facility in Essex Junction, Vermont.

Accordingly, the funding brings GF closer to large-scale production of GaN chips, which are unique in their ability to handle high voltages and temperatures. These chips will enable game-changing performance and efficiency in 5G and 6G cellular communications. Particularly, for infrastructure and handsets, automotive and industrial Internet of things (IoT), as well as power grids and other critical infrastructure.

State-of-the-art GaN Chip Technology

With the new US$35 million in funding through Department of Defense’s Trusted Access Program Office (TAPO), GF plans to purchase additional tools to expand development and prototyping capabilities. Hence, moving closer to at-scale 200mm GaN-on-silicon semiconductor manufacturing.

As part of the investment, GF plans to implement new capabilities for reducing the exposure of GF and its customers to the supply chain constraints of gallium. At the same time, while improving the speed of development, supply, and competitiveness of U.S-made GaN chips.

The funding builds on years of collaboration with the U.S. government – including US$40 million in support from 2020-2022. Most importantly, 200mm is state-of-the-art for GaN chip technology.

“GaN on silicon is an ideal technology for high-performance radio frequency, high voltage power switching, and control applications for emerging markets. It’s important for 6G wireless communications, industrial IoT, and electric vehicles,” said Dr. Thomas Caulfield, president and CEO of GF. “GF has a longstanding partnership with the U.S. government, and this funding is critical to move GaN on silicon chips closer to volume production. These chips will enable our customers to realize bold new designs that push the envelope of energy efficiency and performance of critical technologies we rely on every day.”

Long-Standing Presence

GF’s facility in Essex Junction, Vermont, near Burlington, was among the first major semiconductor manufacturing sites in the United States. Presently, around 1,800 GF employees work at the site.

Built on GF’s differentiated technologies, these GF-made chips make way to smartphones, automobiles, and communications infrastructure applications around the world. The facility is a DMEA-accredited Trusted Foundry and manufactures secure chips in partnership with the U.S. Department of Defense. Particularly, for use in some of the nation’s most sensitive aerospace and defense systems.