Transphorm, Inc., a leader in robust GaN power semiconductors, and Allegro MicroSystems, Inc., a leader in power and sensing semiconductor technology for motion control and energy-efficient systems, have announced partnership in GaN power design. The new collaboration involves Transphorm’s SuperGaN® FETs and Allegro’s AHV85110 Isolated Gate Driver. As a result, they enable the expansion of GaN power system design for high-power applications.

The design of Transphorm’s SuperGaN FETs works in various topologies. They are available in several different packages to support a wide power range while also satisfying diverse end application requirements. Specifically, SuperGaN FETs are used in multiple commercial products. Among them are higher power systems where they increase reliability, power density, and efficiency.

Meanwhile, Allegro’s self-powered, single-channel isolated gate driver IC is optimized for driving GaN FETs in multiple applications and circuits. Specifically, AHV85110 enhances driver efficiency by as much as 50% compared to competitive gate drivers. This unique solution greatly simplifies the system design. Moreover, it reduces noise by 10× and common mode capacitance by 15 times compared to other solutions in the market.

“Allegro’s AHV85110 High Voltage Gate Driver provides a highly compact and efficient power stage implementation. It helps to achieve an approximate 30 percent footprint reduction with the least number of external components and bias supply requirements around Transphorm’s power devices,” said Tushar Dhayagude, Vice President of Worldwide Sales and FAE, Transphorm. “Combined with SuperGaN’s highest reliability and superior dynamic switching performance over competing technologies, the end result is a more efficient, more robust solution with increased power density in critical applications such as server, data centers, renewables and electric vehicles.”

“We are excited about working with Transphorm on a collaboration that further supports Allegro’s focus towards helping customers optimize GaN-based system development and design,” said Vijay Mangtani, Vice President and General Manager of High Voltage Power, Allegro MicroSystems. “We are looking forward to the opportunity to combine our high voltage isolated gate driver AHV85110 with Transphorm’s SuperGaN FET to enable higher power density, higher efficiency, and higher power output in smaller form factors and provide value to both our and Transphorm’s customers.”

Those interested in testing the collaborative solution can do so via Allegro’s APEK85110KNH-06-T evaluation board. The board incorporates both the AHV85110 designed to work in various applications along with Transphorm’s recently announced TOLL package available in three devices with on-resistances of 35, 50, and 72mΩ.