Neo Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, has announced a performance-boosting Floating Body Cell Mechanism for 3D X-DRAM.

Andy Hsu, Founder & CEO of NEO Semiconductor, presented groundbreaking Technology CAD (TCAD) simulation results for NEO’s 3D X-DRAM™ during the 16th IEEE International Memory Workshop (IMW) 2024 in Seoul, Republic of Korea.

40,000× Data Retention and 20× Sensing Window

Neo Semiconductor reveals a unique performance-boosting mechanism called Back-gate Channel-depth Modulation (BCM) for Floating Body Cell. Specifically, it can increase data retention by 40,000× and sensing window by 20×.

“Unlike the traditional 2D Floating Body Cell that uses body effect to change the cell current, our BCM mechanism employs a back-gate voltage to modulate the channel depth. This patented invention increases the sensing window and data retention significantly. Accordingly, it will result in faster and more reliable DRAM, and reduce the refresh frequency to save power,” said Hsu.

“We are proud to lead the DRAM industry into the 3D era while solving the capacity scaling bottleneck that the current 2D DRAM is experiencing,” he continued.

3D X-DRAM

Mainly, NEO Semiconductor’s 3D X-DRAM™ is a first-of-its-kind 3D NAND-like DRAM cell array structure based on floating body cell technology. It can be manufactured using today’s mature 3D NAND-like process. Based on Neo’s estimates, 3D X-DRAM™ technology can achieve 128Gb density with 300 layers. This is eight times today’s DRAM density. It can also reduce the chip’s footprint and power consumption.

Particularly, the traditional 2D Floating Body Cell uses body effect resulting in small sensing window. Meanwhile, NEO’s 3D X-DRAM Floating Body Cell BCM mechanism uses back-gate voltage to change channel depth. As a result, it increases data retention by 40,000× and sensing window by 20×.

-15 May 2024-