GlobalFoundries (GF) and RAAAM Memory Technologies have announced a strategic collaboration to develop and qualify next-generation Gain-Cell RAM (GCRAM) technology on GF’s FDX™ FD-SOI platform. The partnership marks a significant step toward addressing growing memory challenges in advanced AI, automotive, and Internet of Things (IoT) applications.

The companies have already reached a key milestone with the successful tape-out of a GCRAM test vehicle on the FDX platform. The development effort is aimed at delivering one of the densest standard CMOS on-chip memory solutions available for next-generation semiconductor designs.

Addressing a Critical Memory Bottleneck

As edge AI systems, connected vehicles, and intelligent IoT devices process ever-larger datasets, on-chip memory increasingly dominates silicon area and power consumption. Consequently, chip designers are seeking alternatives that can provide higher memory density while lowering energy requirements.

To meet this demand, GF and RAAAM have jointly designed a GCRAM bitcell using advanced design methodologies on the FDX platform. According to the companies, the solution achieves a 40% reduction in memory area and up to a 60% reduction in power consumption compared with conventional SRAM implementations.

The two organizations have also completed the design and tape-out of a GCRAM test chip. Looking ahead, they plan to provide GCRAM design access to lead customers in early 2027.

Combining Memory Innovation with FD-SOI Advantages

The collaboration brings together RAAAM’s patented GCRAM architecture and GF’s FD-SOI manufacturing expertise. The resulting solution is expected to help semiconductor companies either increase on-chip memory capacity within the same silicon footprint or reduce die area while maintaining existing memory levels.

Robert Giterman, CEO and co-founder of RAAAM Memory Technologies, highlighted the significance of the milestone.

“The successful tape-out of our GCRAM test vehicle on GF’s FDX platform is a testament to the powerful synergy between RAAAM’s memory innovations and GlobalFoundries’ manufacturing excellence.”

He added that the combination of GCRAM technology and the ultra-low leakage characteristics of FD-SOI technology can extend data retention and unlock substantial energy savings for edge AI devices.

Expanding Options for AI Chip Designers

GF sees the partnership as an opportunity to strengthen the intellectual property ecosystem available on its FDX platform. The company believes the new memory technology can improve the power-performance-area balance that semiconductor manufacturers increasingly prioritize.

Sudipto Bose, vice president of FD-SOI product management at GlobalFoundries, said, “Partnering with RAAAM Memory Technologies allows us to offer our customers an incredibly compelling on-chip memory solution that redefines the power-performance-area (PPA) equation for advanced AI and other applications.”

Industry interest is already emerging. NXP Semiconductors is evaluating the technology’s potential, citing its ability to expand on-chip memory capacity while reducing off-chip data movement and improving overall system efficiency.

As AI workloads continue to grow across edge and embedded systems, the GF-RAAAM collaboration signals a broader industry push toward more efficient memory architectures capable of supporting future performance demands without increasing power consumption or silicon complexity.

04 September 2026