Japanese manufacturer, Shindengen Electric Manufacturing Co., Ltd. will start sample shipment of silicon carbide (SiC) power module pursuing low noise.

Primarily, the SiC power module MG074 suits bridgeless PFC circuits for consumer devices and full-bridge converters for industrial equipment. For such applications, power devices with high efficiency and low loss are necessary from the perspective of energy conservation.

Deals with Noise and Ringing

To reduce switching losses in such power devices, conventional Si devices are increasingly being replaced with SiC devices that can operate at high speed. However, the surge voltage generated during high-speed operation causes noise and ringing, and countermeasures have become an issue.

Shindengen Electric has developed the SiC power module MG074 to solve these issues. Specifically, this product uses a newly developed package to maximize the performance of the installed SiC MOSFET. The internal structure has a symmetrical layout and equal wiring length. Thus, it minimized the difference in surge voltage generated in the current path. In addition, by carefully arranging the terminals and patterns inside the module, it lowered stray inductance by 66% compared to using two discrete products^*1. This contributes to lower device noise.

In addition, this product reduces thermal interference by distributing semiconductor elements, achieving higher performance and reliability of equipment.

*1 Compared to TO-247 4pin

This is an online translation of a press release in Japan with slight editing made by Dempa.

-15 July 2024-