Third-generation power semiconductor developer and Delta Electronics Inc. affiliate Ancora Semiconductor Inc. has announced investments of its first capital raising round of NT$456 million by strategic investors. Particularly, these investors are ROHM Co., Ltd., Sino-American Silicon (SAS), uPI Semiconductors (uPI), and Delta Electronics.

Ancora will use the forementioned capital to accelerate its gallium nitride (GaN) development endeavors.

Strong Ecosystem with Partners

Dr. T.K. Shing, president of Ancora Semiconductors, said, “GaN is the future of power electronics with benefits of faster switching frequencies, higher efficiency, and lower energy consumption. The ecosystem of GaN technology is evolving rapidly as applications are continuously emerging.”

In addition, Shing said the company is grateful to have ROHM, SAS, and uPI as strategic partners and investors. “We are also grateful for the commitment by our parent company Delta, a leader in power and thermal management technologies and global provider of smart energy-saving solutions.”

Meanwhile, he added, “This powerful alliance will enable us to establish an ecosystem with strong partners in substrate materials, IC design, applications and system solutions, to expedite the adoption of GaN technology that promises unprecedented performance value”.

In addition, the Ancora product line includes the industry’s technology leading GaN discrete components, System in Package (SiP) and System on Chip (SoC) with superior quality, reliability and durability proven under Delta’s stringent qualification system.

Furthermore, Delta’s commitment to provide a wide range of smart energy-saving solutions that leverage its core competence in high-efficiency power electronics, will provide additional momentum and fuel Ancora’s long-term growth. This alliance and capital raising is expected to enable Ancora to increase production capability to serve the growing demand for GaN devices in consumer electronics, telecom, and automotive applications. finally, the ultimate goal is to maximize GaN performance to accelerate power technology innovation and contribute to achieve sustainable development based on energy efficiency.