Mitsubishi Electric Corporation announces it will ship samples of a new Schottky Barrier diode (SBD)-embedded silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) module on May 31. Specifically, the new module features dual-type 3.3kV withstand voltage and 6.0kVrms dielectric strength. Additionally, the new module supports superior power, efficiency, and reliability in inverter systems for large industrial equipment. These include railways and electric power systems. The company will showcase the module at major trade shows, including Power Conversion Intelligent Motion (PCIM) Europe 2023 in Nuremberg, Germany from May 9 to 11.

Power semiconductors are increasingly utilized to efficiently convert electric power to lower the carbon footprint. This is true, particularly in heavy industry, where these devices are used in power conversion equipment, like inverters in railway traction systems and for DC power transmission. Mainly, expectations are high for SiC power semiconductors as they significantly reduce power loss. In addition, power semiconductor modules are used in power conversion devices for large industrial equipment. The demand is expanding for high-power, high-efficiency power semiconductors that help to improve power-conversion efficiency.

To date, Mitsubishi Electric has already released four full-SiC modules and two 3.3kV high-voltage dual-type LV100 modules. The introduction of the new module aims to further contribute to high power output, efficiency, and reliability in inverters for large industrial equipment. Specifically, it reduces switching loss as a SiC-MOSFET with a built-in SBD and an optimized package structure.

Product Features

1) SBD-embedded SiC-MOSFET reduces power loss and contributes to inverter output, efficiency, and reliability

The SBD-embedded SiC-MOSFET and optimized package structure reduce switching loss by 91% compared to the company’s existing Si power module* and 66% lower compared to the existing SiC power module**. Thus, they reduce inverter power loss and contribute to higher output and efficiency. Moreover, the SBD-embedded SiC-MOSFET and optimized current capacity improve inverter reliability.

2) Optimized terminal layout suited to various inverter configurations and capacities

An optimized terminal layout enables parallel connection and supports various inverter configurations and capacities depending on the number of parallel connections.  Also, the package structure with DC and AC main terminals in opposite poles helps to simplify circuit design.

* 3.3kV/600A Si Power Module (CM600DA-66X)

** 3.3kV/750A Full-SiC Power Module (FMF750DC-66A