ST, Sanan to Advance SiC Ecosystem in China

STMicroelectronics and Sanan Optoelectronics have agreed to create a new 200mm silicon carbide device manufacturing joint venture in Chongqing, China. Accordingly, the JV supports the rising demand in China for car electrification as well as for industrial power and energy applications.

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. Meanwhile, Sanan Optoelectronics is a market leader in compound semiconductors in China, engaged in LEDs, SiC, Optical Communications, RF, Filters and GaN products.

The new SiC fab is targeting to start production in Q4 2025 and full buildout is anticipated in 2028, In parallel, Sanan Optoelectronics will build and operate separately a new 200mm SiC substrate manufacturing facility to fulfill the JV’s needs, using its own SiC substrate process.

The JV will make SiC devices exclusively for STMicroelectronics, using ST proprietary SiC manufacturing process technology. Furthermore, it will serve as a dedicated foundry to ST to support the demand of its Chinese customers.

Scales up Global SiC Manufacturing

The total amount for the full buildout of the JV is around US$3.2 billion, including capital expenditures of about US$2.4 billion over the next 5 years. The amount will be financed by contributions from STMicroelectronics and Sanan Optoelectronics, local government support, and loans to the JV.

“Creating a dedicated foundry with a key local partner is the most efficient way to serve the rising demand of our Chinese customers. The combination of Sanan Optoelectronics’ future 200mm substrate manufacturing facility with the front-end JV and ST’s existing back-end facility in Shenzhen, China will enable ST to offer our Chinese customers a fully vertically integrated SiC value chain,” said Jean-Marc Chery, President and CEO of STMicroelectronics.

In addition, Chery said “It is an important step to further scale up our global SiC manufacturing operations, coming in addition to our continuing significant investments in Italy and Singapore. This JV is expected to be one of the enablers of the opportunity we see to reach US$5B+ SiC revenues by 2030. This initiative is consistent with ST 2025-27 US$20B+ revenue ambition and the associated financial model, previously communicated to the financial markets.”

Meanwhile, Simon Lin, CEO of Sanan Optoelectronics saw the new JV as a major driving force for the wide adoption of SiC devices in China. In addition, Lin said, “Being an international, well-known, high quality SiC foundry service company, Sanan will also supply its SiC substrate to this new joint venture, by building a dedicated new SiC substrate factory. This is an important step for Sanan Optoelectronics’ ambitions as a SiC foundry.”