Toshiba Electronic Devices & Storage Corporation (Toshiba) has introduced the TRSxxx65H series, the company’s third and latest^[1] generation of silicon carbide (SiC) Schottky barrier diodes (SBDs) for industrial equipment.

Volume shipments of the first 12 products, all 650V, have already started. Particularly, with seven products housed in TO-220-2L packages and five in DFN8×8 packages.

Reduced Power Dissipation

The new products use a new metal in a third generation SiC SBD chip that optimizes the junction barrier Schottky (JBS) structure^[2] of the second generation products. Thus, they achieve industry-leading^[3] low forward voltage of 1.2V (Typ.). Most importantly, this is 17% lower than the 1.45V (Typ.) of the previous generation.

Moreover, they also improve the trade-offs between forward voltage and total capacitive charge, and between forward voltage and reverse current. Thus, reducing power dissipation and contributes to high efficiency of equipment.

Toshiba Electronic Devices & Storage Corporation is a leading supplier of advanced semiconductor and storage solutions. Particularly, it draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.

The company’s 21,500 employees around the world share a determination to maximize product value. In addition, Toshiba also promotes close collaboration with customers in the co-creation of value and new markets.

With annual sales approaching 800-billion yen (US$6.1 billion), Toshiba Electronic Devices & Storage Corporation looks forward to contributing to a better future for people everywhere.

Notes:

[1] As of July 2023.
[2] JBS structure lowers the electric field at the Schottky interface and reduces leakage current.
[3] As of July 2023, Toshiba survey.