ROHM and STMicroelectronics have announced the expansion of the existing multi-year, long-term deal. Particularly, the agreement covers the 150mm silicon carbide (SiC) substrate wafers supply deal with SiCrystal, a ROHM group company.

Accordingly, the new multi-year agreement governs the supply of larger volumes of SiC substrate wafers manufactured in Nuremberg, Germany. The minimum expected value is around US$230 million.

Sustainability in Mobility, Industrial

Geoff West, EVP and Chief Procurement Officer, STMicroelectronics said the expanded deal will bring new volumes of 150mm SiC substrate wafers. Particularly, to support ST’s devices manufacturing capacity ramp-up for automotive and industrial customers worldwide. In addition, West said, “It helps strengthen our supply chain resilience for future growth, with a balanced mix of in-house and commercial supply across regions.”

Meanwhile, Dr. Robert Eckstein, President and CEO of SiCrystal, a ROHM group company expressed elation with the extended deal. “We will continue to support our partner to expand SiC business by ramping up 150mm SiC substrate wafer quantities continuously and by always providing reliable quality.”

Energy-efficient SiC power semiconductors enable electrification in the automotive and industrial sectors in a more sustainable way. Thus, by facilitating more efficient energy generation, distribution and storage, SiC supports cleaner mobility solutions. Moreover, it helps lower emissions in industrial processes and a greener energy future.

Finally, it also helps more reliable power supplies for resource-intensive infrastructure like data centers dedicated to AI applications.

The three companies first entered an agreement in 2020. Particularly, it covers US$120 million worth of supply of 150mm SiC by SiCrystal to ST

advanced 150mm silicon carbide wafers by SiCrystal to STMicroelectronics during this period of demand ramp-up for silicon carbide power devices.