Cambridge GaN Devices (CGD) has signed a Memorandum of Understanding (MoU) with Industrial Technology Research Institute (ITRI) of Taiwan to solidify partnership in developing high-performance gallium nitride (GaN) solutions for USB-PD adaptors. Additionally, the MoU covers the sharing of domestic and international market information, joint visits to potential customers and promotion.

CGD is a fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices for greener electronics.

“We are excited to partner with ITRI. Indeed, it is an organization with a power solution research team that is very experienced in developing power solutions and holds many patents,” said Andrea Bricconi, Chief Commercial Officer at CGD.

He mentioned that CGD will demonstrate some of ITRI’s board designs at the PCIM show in Nuremberg in June. Specifically, these products utilize CGD’s unique IC chip architecture and ITRI’s patented designs to achieve product size reduction, high efficiency and power density, and cost competitiveness.

“CGD’s IC-enhanced GaN – ICeGaN – is a novel platform that improves ease-of-use, facilitates smart temperature control and enhances gate reliability. We are excited to include these benefits in our new power designs,” commented Wen-Tien Tsai, Leader of Commercial Power Design Team, GEL/ITRI.

According to leading WBG analysts, Yole Group, the GaN market might exceed US$ 1B. Mainly, key growth in the applications of comms power supplies, and automotive DC/DC converters and on-board chargers is notable. However, the first commercialized product in the market to adopt GaN devices has been USB-PD adaptors. Particularly, the partnership will first address the first designs in this market.

Specifically, the agreement covers the development of power solutions in the 140 to 240W range with power densities exceeding 30W/in³. Specifically, these suit e-mobility, power tools, notebook and cell phone applications.

-31 May 2024-