Toshiba Electronic Devices & Storage Corporation has added the TRSxxx120Hx Series of 1200V products to its lineup of third-generation silicon carbide (SiC) Schottky barrier diodes (SBD) for industrial equipment, such as photovoltaic inverters, EV charging stations, and switching power supplies. Accordingly, Toshiba starts shipments of 10 new products in the series. This comprise five in a TO-247-2L package and five in a TO-247 package.

Particularly, the new TRSxxx120Hx Series are 1200V products that use the improved junction-barrier Schottky (JBS) structure^[1] of Toshiba’s third-generation 650V SiC SBD. The use of a new metal in the junction barrier allows the new products to achieve industry-leading^[2] low forward voltage of 1.27V (typ.), low total capacitive charge, and low reverse current. Thus, it significantly reduces equipment power loss in more higher-power applications.

Toshiba will continue to expand its SiC power device lineup. Mainly, it will focus on improving efficiency that reduces power loss in industrial power equipment.

Notes:

^[1] Improved JBS Structure: A structure that incorporates the Merged PiN Schottky (MPS) structure. This reduces forward voltage at high currents, into the JBS structure, which lowers the electric field at the Schottky interface and reduces current leakage.

^[2] Among 1200V SiC SBDs. As of September 2024, Toshiba survey.

-25 September 2024-