Infineon Technologies AG supplies its power semiconductor devices to FOXESS, which manufactures inverters and energy storage systems. Accordingly, the two sides aim to promote the development of green energy.

Infineon will provide its CoolSiC™ MOSFETs 1200 V to FOXESS EiceDRIVER™ gate drivers for industrial energy storage applications. At the same time, FOXESS’ string PV inverters will use Infineon’s IGBT7 H7 1200 V power semiconductor devices.

Recently, the global market for photovoltaic energy storage systems (PV-ES) has grown at a high speed. As competition in the PV-ES market accelerates, improving power density has become key to success. Furthermore, how to improve efficiency and power density for energy storage applications has attracted much attention.

Suits Energy, Industrial Applications

For that reason, Infineon’s CoolSiC MOSFET 1200 V and IGBT7 H7 1200 V series power semiconductor devices adopt the latest semiconductor technologies. It also carries design concepts tailored to industrial applications.

Yu Daihui, Senior Vice President and Head of Industrial & Infrastructure of Infineon Technologies Greater China said the company places high importance in driving decarbonization. “As an industry leader in power semiconductors, we are proud to work closely with FOXESS. We will continue to drive decarbonization by enabling higher power density and more reliable systems for PV-ES applications.”

On the other hand, Zhu Jingcheng, Chairman of FOXESS, said the company’s products have made significant improvements due to Infineon’s advanced components. Jingcheng said, “This has been an important driving force for FOXESS’ growth. Infineon’s technical support and product quality have not only strengthened our competitiveness. (Moreover, it has) also expanded our presence in the market. We are confident about the future and look forward to further cooperation with Infineon to jointly promote the development of the industry. At the same time, create greater value for our customers.”

With a high power density, Infineon’s CoolSiC MOSFETs 1200 V can reduce losses by 50 percent and provide ~2 percent additional energy without increasing the battery size, which is especially beneficial for high-performance, lightweight, and compact energy storage solutions. FOXESS’ H3PRO 15 kW-30 kW energy storage series uses Infineon’s CoolSiC MOSFETs 1200 V for all models. Thanks to Infineon’s excellent performance, the H3PRO series has achieved an efficiency of up to 98.1 percent and excellent EMC performance; with superior performance and reliability, the H3PRO series has seen rapid sales growth in the global market.

Improves System Reliability, Reduces Costs

Infineon’s TRENCHSTOP IGBT7 H7 650 V / 1200 V series has lower losses and helps improve the overall efficiency and power density of inverters. High-current mold packaged discrete devices with current handling capability above 100A can reduce the number of IGBTs in parallel. At the same time, replacing the IGBT module solution. Thus, further improving system reliability and reducing costs.  

In addition, the H7 series has become an industry benchmark for its high-quality performance and greater resistance to humidity. Presently, FOXESS’ main industrial and commercial model, the R Series 75-110 kW, redefines the overall design of the 100kW model by using IGBT7 H7 series discretes. Moreover, the efficiency of the whole machine can reach up to 98.6 percent. Thanks to the low power loss and high power density of the IGBT7 H7 series in discrete packages, they can simplify technical problems such as current sharing in the paralleling process.

Every power device needs a driver, and the right driver can make the design a lot easier. Therefore, Infineon offers more than 500 EiceDRIVER gate drivers with typical output currents of 0.1 A~18 A and comprehensive protection functions. These include fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault reporting, shutdown, and overcurrent protection. Hence, all are suitable for power devices including CoolSiC and IGBTs.

-23 April 2024-