STMicroelectronics announces a new high-volume 200mm silicon carbide (SiC) manufacturing facility for power devices and modules in Catania, Italy. In addition, it will also house a comprehensive test and packaging.

Combined with the SiC substrate manufacturing facility being readied on the same site; These facilities will form ST’s Silicon Carbide Campus. Thus, realizing the company’s vision of a fully vertically integrated manufacturing facility for the mass production of SiC.

Contributes to SiC Technology Leadership

ST considers the creation of the new Silicon Carbide Campus as a key milestone to support customers for SiC devices. Particularly, across automotive, industrial, and cloud infrastructure applications, as they transition to electrification and seek higher efficiency.

 “The fully integrated capabilities unlocked by the Silicon Carbide Campus in Catania will contribute significantly to ST’s SiC technology leadership for automotive and industrial customers,” said Jean-Marc Chery, President and Chief Executive Officer of STMicroelectronics. “The scale and synergies offered by this project will enable us to better innovate with high-volume manufacturing capacity. This will benefit our European and global customers. (Especially) as they transition to electrification and seek more energy efficient solutions to meet their decarbonization goals.”

 The Silicon Carbide Campus will serve as the center of ST’s global SiC ecosystem, integrating all steps in the production flow. This includes SiC substrate development, epitaxial growth processes, 200mm front-end wafer fabrication and module back-end assembly. Moreover, it also covers process R&D, product design, advanced R&D labs for dies, power systems and modules, and full packaging capabilities.

For that reason, the new facility will achieve a first-of-a-kind in Europe for the mass production of 200mm SiC wafers with each step of the process. Namely, substrate, epitaxy & front-end, and back-end and using 200 mm technologies for enhanced yields and performances.

€5 Billion Investments

The new facility will likely start production in 2026 and to ramp to full capacity by 2033. Accordingly, targets up to 15,000 wafers per week at full build-out. Moreover, the company estimates total investments to be around five billion euros. This will include support of around two billion euros provided by the State of Italy within the framework of the EU Chips Act.

Sustainable practices are integral to the design, development, and operation of the Silicon Carbide Campus. Thus, ensuring the responsible consumption of resources including water and power.

SiC is a key compound material consisting of silicon and carbon that offers several advantages over conventional silicon for power applications. Specifically, the wide bandgap of SiC and its intrinsic characteristics – better thermal conductivity, higher switching speed, low dissipation – make it particularly suitable for the manufacturing of high-voltage power devices (notably above 1,200V).

SiC power devices, in the form of SiC MOSFET sold as bare die and full SiC modules, are especially useful in electric vehicles and fast-charging infrastructure. Furthermore, it also suits renewable energies and various industrial applications including datacenters. This is because they offer higher electric currents and lower leakage than traditional silicon semiconductors, increasing energy efficiency.

However, SiC chips are more difficult and more costly to manufacture than silicon chips with many challenges to overcome in the industrialization of the manufacturing process.

31 May 2024