STMicroelectronics is introducing its fourth generation STPOWER silicon carbide (SiC) MOSFET technology. Specifically, the Generation 4 technology brings new benchmarks in power efficiency, power density, and robustness.

Moreover, the new technology come optimized for traction inverters, the key component of electric vehicle (EV) powertrains. Thus, able to serve the needs both of the automotive and industrial markets,

The company plans to introduce further advanced SiC technology innovations through 2027 as a commitment to innovation.

 “STMicroelectronics (remains) committed to driving the future of electric mobility and industrial efficiency through our cutting-edge silicon carbide technology. We continue to advance SiC MOSFET technology with innovations in the device, advanced packages, and power modules,” said Marco Cassis, President, Analog, Power & Discrete, MEMS and Sensors Group. In addition, Cassis said, “Together with our vertically integrated manufacturing strategy, we are delivering industry leading SiC technology performance. At the same time, a resilient supply chain to meet the growing needs of our customers and contribute to a more sustainable future.”

Higher Efficiency, Greater Power Density 

As the market leader in SiC power MOSFETs, ST is driving further innovation to exploit SiC’s higher efficiency and greater power density compared to silicon devices. This latest generation of SiC devices can benefit future EV traction inverter platforms, with further advances in size and energy-saving potential.

While the EV market continues to grow, challenges remain to achieve widespread adoption and car makers are looking to deliver more affordable electric cars. For that reason, 800V EV bus drive systems based on SiC have enabled faster charging and reduced EV weight. Thus, allowing car makers to produce vehicles with longer driving ranges for premium models.

ST’s new SiC MOSFET devices, which will become available in 750V and 1200V classes, will improve energy efficiency and performance of both 400V and 800V EV bus traction inverters. Most importantly, bringing the advantages of SiC to mid-size and compact EVs — key segments to help achieve mass market adoption. The new generation SiC technology is also suitable for a variety of high-power industrial applications, including solar inverters, energy storage solutions and datacenters, significantly improving energy efficiency for these growing applications.

Availability, Use Cases

ST has completed qualification of the 750V class of the fourth generation SiC technology platform. Furthermore, it expects to complete qualification of the 1200V class in the first quarter of 2025. Commercial availability of devices with nominal voltage ratings of 750V and 1200V will follow. Thus, allowing designers to address applications operating from standard AC-line voltages up to high-voltage EV batteries and chargers.

ST’s Generation 4 SiC MOSFETs provide higher efficiency, smaller components, reduced weight, and extended driving range compared to silicon-based solutions. These benefits are critical for achieving widespread adoption of EVs and leading EV manufacturers. ST’s Generation 4 SiC MOSFETs are also suitable for use in high-power industrial motor drives, benefiting from the devices’ improved switching performance and robustness.

Thus, resulting in more efficient and reliable motor control, reducing energy consumption and operational costs in industrial settings. In renewable energy applications, the Generation 4 SiC MOSFETs enhance the efficiency of solar inverters and energy storage systems, contributing to more sustainable and cost-effective energy solutions. Additionally, these SiC MOSFETs can be utilized in power supply units for server datacenters for AI, where their high efficiency and compact size are crucial for the significant power demands and thermal management challenges.

Roadmap

ST is accelerating the development of SiC power devices through its vertically integrated manufacturing strategy. For that reason, ST is developing multiple SiC technology innovations in parallel to advance power device technologies over the next three years. The fifth generation of ST SiC power devices will feature an innovative high-power density technology based on planar structure.  ST is at the same time developing a radical innovation that promises outstanding on-resistance RDS(on)  value at high temperatures and further RDS(on) reduction, compared to existing SiC technologies. 25 September 2024