Resonac Upgrades SiC Epitaxial Wafers for Power ICs

Resonac Corporation starts mass production of the new third-generation (3Gen) of high-grade silicon carbide (SiC) epitaxial wafer (HGE-3G) for power semiconductors. HGE-3G has quality superior to that of second-generation high-grade SiC epi-wafer (HGE-2G), which is already in mass production.

Specifically, SiC power semiconductor reduces power loss occurring in the conversion of electricity.  Also, it emits less heat than conventional silicon-wafer-based power semiconductors, thereby conserving energy.  Therefore, the demand for SiC power semiconductor is increasing rapidly, especially in the field of industrial use. These include use in electric vehicles (EVs) and renewable-energy-based power generation. 

Meanwhile, SiC epi-wafer is produced through the deposition and growth of epitaxial SiC layer on the surface of single crystal SiC substrate. It is used as the main material for SiC power semiconductors.  Resonac supplies world-class-quality SiC epi-wafers, as the largest independent supplier in the world. Moreover, the company is acclaimed by many device manufacturers inside and outside Japan.

Sample SiC epitaxial wafer

High-end models of power semiconductors for use in high-priced EVs and railcars are required to conduct higher-density electric current . This aims to achieve high output and space saving concurrently.  To realize the conduction of high-density electric current, SiC-epi-wafer manufacturers must develop a technology to prevent the expansion of dislocation defects existing in SiC substrate into epitaxial SiC layer. 

This time, Resonac developed a latest technology to grow epitaxial SiC layer and successfully solved the abovementioned problem. Moreover, it started to mass produce third-generation high-grade SiC epi-wafers.  This HGE-3G features high reliability under high electric current density. Further, it will contribute to the spread of SiC-based high-end power modules.

The Resonac Group aims to be a “Co-Creative Chemical Company” and contribute to the sustainable development of global society.  Under this vision, Resonac positions its operation to produce SiC epitaxial wafers, which contribute to the efficient use of energy, as a next-generation business. To this end, it will allocate much of its business resources. 

In September 2022, Resonac started to ship samples of 200mm SiC epi-wafers using in-house manufactured single crystal SiC wafers.*1  In addition, Resonac has been promoting “The Project to Develop SiC Wafers Technology for Next-generation Green Power Semiconductors.”*2 Specifically, it aims to improve the quality of SiC epi-wafer further.  The Resonac Group will continue contributing to the spread of SiC power semiconductors. It will maintain “Best in Class” as its motto and provide high-performance and highly reliable products.

*1. For detail, please refer to the news release, “Showa Denko Starts to Ship Samples of 200mm SiC Epi-wafers,” which was announced on September 7, 2022.
*2. For detail, please refer to the news release, “Showa Denko’s Program to Develop 8-inch SiC Wafers for Next-generation Green Power Semiconductor Selected for NEDO’s Green Innovation Fund Projects,” which was announced on May 23, 2022.