Samsung Electronics Co., Ltd. announced the development of the industry’s first and highest-capacity 32-Gbit DDR5 DRAM¹ using 12nm-class process technology. This achievement comes after Samsung began mass production of its 12nm-class 16Gbit DDR5 DRAM in May 2023. Specifically, it solidifies Samsung’s leadership in next-generation DRAM technology. Also, this development signals the next chapter of high-capacity memory.

“With our 12nm-class 32Gbit DRAM, we have secured a solution that will enable DRAM modules of up to 1-terabyte (TB), allowing us to be ideally positioned to serve the growing need for high-capacity DRAM in the era of AI (Artificial Intelligence) and big data,” said SangJoon Hwang, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “We will continue to develop DRAM solutions through differentiated process and design technologies to break the boundaries of memory technology.”

500,000-Fold Increase in DRAM Capacity Since 1983

Having developed its first 64-Kbit DRAM in 1983, Samsung has now succeeded in enhancing its DRAM capacity by a factor of 500,000 over the last 40 years.

Samsung’s newest memory product highlights the industry’s highest capacity for a single DRAM chip. Additionally, it offers double the capacity of 16Gbit DDR5 DRAM in the same package size. Specifically, the new product was developed using cutting-edge processes and technologies to increase integration density and design optimization.

Previously, DDR5 128GB DRAM modules manufactured using 16Gbit DRAM required the Through Silicon Via (TSV) process. However, by using Samsung’s 32Gbit DRAM, production of the 128GB module is possible without using the TSV process. At the same time, it offers lower power consumption by approximately 10% compared to 128GB modules with 16Gbit DRAM. Specifically, this technological breakthrough makes the product the optimal solution for enterprises that emphasize power efficiency. Among them are data centers.

With its 12nm-class 32Gbit DDR5 DRAM as a foundation, Samsung plans to continue expanding its lineup of high-capacity DRAM. Accordingly, it aims to meet the current and future demands of the computing and IT industry. Also, Samsung will reaffirm its leadership in the next-generation DRAM market by supplying the 12-nm-class 32Gbit DRAM to data centers as well as to customers that require applications like AI and next-generation computing. Also, the product will play an important role in Samsung’s continued collaboration with other key industry players.

Samsung will start mass production of the new 12nm-class 32Gbit DDR5 DRAM by the end of this year.

¹ DDR5 DRAM: Double-Data Rate 5 Dynamic Random-Access Memory