Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched silicon carbide (SiC) MOSFETs that use a four-pin TO-247-4L(X) package. Particularly, this new model reduces switching loss with the company’s latest^[1] 3rd generation SiC MOSFETs chip for industrial equipment. Volume shipments of ten products, five with 650V ratings and five with 1200V, start today.

Improves Equipment Efficiency

The new products are the first in Toshiba’s SiC MOSFET line-up to use the four-pin TO-247-4L(X) package, which allows Kelvin connection of the signal source terminal for the gate drive. Moreover, the package can reduce the effect of source wire inductance inside the package, improving high-speed switching performance.

Meanwhile, for the new TW045Z120C, the turn-on loss is approximately 40% lower and the turn-off loss comes lower by approximately 34%^[2]. Nonetheless, the new product comes superior to Toshiba’s current product TW045N120C in a three-pin TO-247 package. This helps to reduce equipment power loss.

A reference design for a three-phase inverter using SiC MOSFETs is available online.

Furthermore, Toshiba said it will continue to expand its line-up to meet market trends and contribute to improving equipment efficiency and enlarging power capacity.

Compared to Si (silicon) IGBTs and MOSFETs, which are currently mainstream, power MOSFETs using SiC not only excel in low conduction loss and operation in high-temperature environments. However, they also contribute to low-loss applications through high-speed switching.
TO-247-4L(X), a new package for our 3rd generation SiC MOSFETs, is a 4-terminal type. Thus, by reducing the influence of the inductance of the source wire inside the package, it is possible to draw out high-speed switching performance. 

Applications

• Switching power supplies (servers, data centers, communications equipment, etc.)
• EV charging stations
• Photovoltaic inverters
• Uninterruptible power supplies (UPS)

Features

• Four-pins TO-247-4L(X) package:
  Switching loss is reduced by Kelvin connection of the signal source terminal for the gate drive
• 3rd generation SiC MOSFETs
• Low drain-source On-resistance x gate-drain charge
• Low diode forward voltage: V_DSF=-1.35V (typ.) (V_GS=-5V)

Notes:
[1] As of August 2023.
[2] As of August 2023, values measured by Toshiba (test condition: V_DD=800V, V_GG=+18V/0V, I_D=20A, R_G=4.7Ω, L=100μH, T_a=25°C)