The Industrial Technology Research Institute (ITRI) has joined forces with Taiwan Semiconductor Manufacturing Company (TSMC) for pioneering research into the development of a spin-orbit-torque magnetic random-access memory (SOT-MRAM) array chip. Mainly, this SOT-MRAM array chip showcases innovative computing in-memory architecture. Also, it highlights a power consumption of merely 1% of a spin-transfer torque magnetic random-access memory (STT-MRAM) product.

Their collaborative efforts have resulted in a research paper on this microelectronic component. It was presented at the 2023 IEEE International Electron Devices Meeting (IEDM 2023). Both organizations underscore the cutting-edge nature of their findings and their pivotal role in advancing next-generation memory technologies.

Dr. Shih-Chieh Chang, General Director of Electronic and Optoelectronic System Research Laboratories at ITRI, highlighted the collaborative achievements of both organizations. “Following the co-authored papers presented at the Symposium on VLSI Technology and Circuits last year, we have further co-developed a SOT-MRAM unit cell,” said Chang.

Further, Chang explained this unit cell achieves simultaneous low power consumption and high-speed operation, reaching speeds as rapid as 10nsec. Moreover, its overall computing performance can be further enhanced when integrated with computing in memory circuit design. “Looking ahead, this technology holds the potential for applications in high-performance computing (HPC), artificial intelligence (AI), automotive chips, and more,” Chang continued.

Era of High-Speed Computing

The advent of AI, 5G, and AIoT has created a significant demand for rapid processing. Accordingly, it necessitates new memory solutions characterized by enhanced speed, stability, and energy efficiency. The successful collaboration between ITRI and TSMC shines a light on the path toward next-generation memory technology. Further, it also strengthens Taiwan’s international competitive advantage in the semiconductor sector.