NXP scores design wins of RF solutions with Samsung Flip 3 phones

NXP Semiconductors, a mixed signal and analog chip maker said that its WLAN8101H and WLAN8201C RF front end modules (FEMs) were designed in Samsung Galaxyz Flip 3 smart phones to deliver Wi-Fi 6 connectivity experiences.

NXP’s WLAN8101H and WLAN8201C devices are part of the QUBiC SiGe WLAN portfolio, which offers an optimized combination of output power, linearity and efficiency.

So, it can deliver an extended transmission range and improved receive sensitivity even at the most demanding Wi-Fi 6 modulation formats, making for a better overall user experience in terms of speed and coverage.

The WLAN8101H also helps boost Bluetooth performance.

As Wi-Fi technology has constantly evolved, the latest generation of Wi-Fi such as 802.11ax or Wi-Fi 6) hit the market, promising to deliver many performance enhancements, including a virtually unlimited number of devices, reduced latency and increased network capacity and efficiency.

NXP’s Wi-Fi 6 FEMs is a god fit for these requirements in terms of RF performance needed to help reach the full potential of this new standard.

This enables the Samsung Flip 3 to deliver fast and reliable Wi-Fi performance to consumers.

True enough, QUBiC SiGe (silicon germanium) technology is the best choice ever of its kind for high-performance and high-end RF used in Wi-Fi ax and 6, because it can better meet requirements for the applications than competing technologies like RF CMOS, GaAs, and GaN.

QUBiC SiGe is a sort of BiCMOS solution that comes combined together with high-speed and gain of bipolar technology and simple low-power CMOS logic gates. As it is fabricated with silicon, it costs less than rival GaAs and GaN to produce, and more importantly, is easier to integrate more of silicon contents.

The advantages come at the expense of power consumption, but NPX’s QUBiC SiGE has constantly evolved to the extent that it approaches GaN and GaAs in terms of power budget.

Now in its 8th generation, NXP’s SiGe:C QUBiC technology is making inroads into cellular base stations with integrated LNAs offering the same performance and more flexibility in a single chip than previous discrete solutions based on GaAs. And in mobile phones where integrated CMOS solutions pushed other technologies out of the RF processing function, SiGe is finding its way back in via the integrated multi-channel LNAs needed to boost incoming RF signals back to the levels needed for acceptable system performance.