Infineon Technologies AG has made significant progress on its 200mm silicon carbide (SiC) roadmap. Specifically, the company will already release the first products based on the advanced 200 mm SiC technology to customers in Q1 2025.
Manufactured in Villach, Austria, the products provide SiC power technology for high-voltage applications, including renewable energies, trains, and electric vehicles. This feat is important for Infineon because this is the first time the company is releasing SiC products to its customers based on 200mm SiC wafer manufacturing technology.

Understanding SiCs

Infineon is the world’s first commercial SiC device supplier. Its long market experience enables the company to deliver highly reliable, industry-leading SiC performance. Currently, the adoption of SiC-based power solutions is rapidly growing across multiple markets. SiCs enable smaller, lighter, and more cost-effective designs, converting energy more efficiently to unlock new clean energy applications. To better support these growing markets, Infineon is continuously diversifying its supplier base to secure access to high-quality silicon carbide substrates.

SiC is a semiconductor compound consisting of silicon (Si) and carbon (C) and belongs to the wide bandgap (WBG) family of materials.

One unique characteristic is its strong physical bond, giving the semiconductor a high mechanical, chemical, and thermal stability. Thus, enabling SiC devices to be used at junction temperatures higher than those of silicon at even over 200°C. Moreover, SiC also offers low drift region resistance, which is a key factor for high-voltage power devices. For these reasons, SiC-based power devices are becoming crucial in power electronics.

The importance of Infineon’s announcement now means the road is clear towards moving to larger 200mm SiC wafers. Previously, the diameter of SiC substrates was predominantly 3 inches, until it grew to 100mm, then to 150mm, which is the present mainstream. With the transition to 200mm, this means there will be increased device density on a single wafer. Thus, potentially leading manufacturers to lower production costs.

Strengthening Supply Chain

In recent years, Infineon has been strengthening its supply chain for both 150mm and 200mm SiC wafers, a reflection of rapidly growing adoption across multiple markets.

In August last year, Infineon opened the first phase of its new SiC power semiconductor fab in Kulim, Malaysia. This will strengthen Infineon’s role as the global leader in power semiconductors. The first phase of the fab, with an investment volume of two billion euros, will focus on the production of SiC power semiconductors and will include GaN epitaxy.

Moreover, the transition of Infineon’s manufacturing site in Kulim to 200mm diameter wafers is fully on track. The newly built Module 3 will likely commence high-volume production aligned with market demand.

Dr. Rutger Wijburg, Chief Operations Officer of Infineon, said, “By ramping up SiC production in Villach and Kulim in phases, we are improving cost-efficiency and continuing to ensure product quality. At the same time, we are making sure our manufacturing capacities can meet the demand for SiC-based power semiconductors.”

Suits Wide Range of Applications

SiC semiconductors have revolutionized high-power applications by switching electricity even more efficiently, demonstrating high reliability and robustness under extreme conditions, and by making even smaller designs possible. Infineon’s SiC products let customers develop energy-efficient solutions for electric vehicles, fast charging stations and trains as well as renewable energy systems and AI data centers.

The release to customers of the first SiC products based on the 200mm wafer technology marks a substantial step forward in Infineon’s SiC roadmap. Moreove, the company has a strong focus on providing customers with a comprehensive portfolio of high-performance power semiconductors that promote green energy and contribute to CO 2 reduction.

As “Infineon One Virtual Fab” for highly innovative wide-bandgap (WBG) technologies, Infineon’s production sites in Villach and Kulim share technologies and processes that allow fast ramping and smooth and highly efficient operations in SiC and GaN manufacturing. The 200mm SiC manufacturing activities now add to Infineon’s strong track record of delivering industry-leading semiconductor technology and power system solutions.

14 February 2025