Mitsubishi Electric Corporation has announced it will enter into a strategic partnership with Nexperia B.V. to jointly develop silicon carbide (SiC) power semiconductors for the power electronics market.
Particularly, Mitsubishi Electric will leverage its wide-bandgap semiconductor technologies to develop and supply SiC MOSFET chips. In turn, Nexperia will use these chips to develop SiC discrete devices.
The electric vehicle market is expanding worldwide and is helping to drive the exponential growth of SiC power semiconductors. Moreover, they offer lower energy loss, higher operating temperatures, and faster switching speeds than conventional silicon power semiconductors.
Mitsubishi Electric has established leading positions in applications such as high-speed trains, high-voltage industrial applications and home appliances. In addition, the company launched the world’s first SiC power modules for air conditioners in 2010. Thus, became the first supplier of an all-SiC power module for Shinkansen bullet trains in 2015.
Mitsubishi Electric has accumulated superior expertise in the development and manufacture of SiC power modules. Most importantly, they possess advanced performance and high reliability.