AEI

ASIA ELECTRONICS INDUSTRYYOUR WINDOW TO SMART MANUFACTURING

ROHM, Toshiba Seal New Deal in IC Manufacturing

Japan’s Ministry of Economy, Trade and Industry (METI) has recognized the plan of ROHM Co., Ltd. and Toshiba Electronic Devices & Storage Corporation to collaborate in the manufacture of power devices. Accordingly, the plan, which aims to increase volume production of power devices, is a measure that supports the Japanese government’s target of securing a stable semiconductor supply.

Particularly, ROHM and Toshiba Electronic Devices & Storage will respectively make intensive investments in silicon carbide (SiC) and silicon (Si) power devices. In addition, they will effectively enhance their supply capabilities and utilize other party’s production capacity.

Power devices are essential for supplying and managing power supply in all kinds of electronic equipment, and for achieving a carbon-free, carbon-neutral society. Currently, demand will likely see continued growth.

Specifically, in automotive applications, the development of more efficient, smaller, and lighter electric powertrains has advanced along with the rapid expansion in vehicle electrification. Meanwhile, in industrial applications, a stable supply of power devices and improved characteristics have been required to support increasing automation and higher efficiency requirements.

Leverage Each Other’s Strengths

Against this backdrop, ROHM has formulated a management vision. Particularly, one that “focuses on power and analog solutions and solves social problems by contributing to our customers’ needs for energy savings and miniaturization of their products.” In addition, it also aims to tap SiC power devices as essential keys to energy savings.

Since the world’s first mass production of SiC MOSFETs, ROHM has been constantly developing industry-leading technologies. Among these are ROHM’s latest 4th Generation SiC MOSFETs that will be adopted for numerous electric vehicles and industrial equipment.

As one of its priority projects, ROHM is working on the SiC business, which contains aggressive and continuous investment to increase the production capacity of SiC and meet strong demand growth.

On the other hand, Toshiba Group, with its long-standing “Committed to People, Committed to the Future”, aims to advance the achievement of carbon neutrality and a circular economy. Particularly, Toshiba Electronic Devices & Storage has for decades supplied Si power devices. Mainly, for automotive and industrial markets, which have helped to secure energy-saving solutions and equipment miniaturization.

Moreover, the company started production on a 300mm wafer line last year, and is accelerating investment to enhance production capacity and meet strong demand growth. It is also advancing the development of a wider lineup of SiC power devices, especially for automotive and power transmission and distribution applications, taking full advantage of the expertise it has cultivated in railway vehicle applications.

Long-Planned Partnership

Earlier, ROHM has already announced its participation in the privatization of Toshiba. Nonetheless, this investment did not serve as the starting point for manufacturing collaboration between the two companies. Under intensifying international competition in the semiconductor industry, ROHM and Toshiba Electronic Devices & Storage have been considering collaboration in the power device business for some time. Thus, resulting in the joint application.

ROHM and Toshiba Electronic Devices & Storage will collaborate in manufacturing power devices, through intensive investments in SiC and Si power devices. Moreover, the objective is to enhance both companies’ international competitiveness. In addition, the companies will also seek to contribute to strengthening the resilience of semiconductor supply chains in Japan.